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SIGMATECH, INC.

B136 L1 C. Arellano St.
Katarungan Vill., (Daang Hari), Poblacion
Muntinlupa City 1776, Philippines

Phone    - (632)358-5889 (Service)
                - (632)576-8913 (Sales)
                - (632)576-1599 (Admin/Accounting)
Fax          - (632) 807-8392
Hotlines - 0928 503-3281 (Smart)
                - 0917 847-5730 (Globe)
Email      - sales@sigmatech-inc.com
                - service@sigmatech-inc.com

Critical Point Dryers

(S)TEM (Transmission Electron Microscope)
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Critical Point Dryers Critical point drying is an established method of dehydrating biological tissue prior to examination in the scanning electron microscope. The technique was first introduced commercially for scanning electron microscopy (SEM) specimen preparation by Polaron in 1970. The original design concepts, which included a horizontal chamber, are still embodied in the design of the E3000 and E3100 systems.
Sputter Coaters and
SEM/TEM Carbon Coaters
Sputter coating is the standard method for preparing non-conducting or poorly conducting specimens for observation in a scanning electron microscope (SEM). We offer low-cost, rotary-pumped systems for depositing non-oxidising metals - such as gold (Au) and platinum (Pt) - and also turbomolecular-pumped models, suitable for oxidising and non-oxidising metals - such as chromium (Cr).
Glow Discharge Systems The primary application of glow discharge is as a technique for the surface modification, or 'wetting', of newly-evaporated transmission electron microscopy (TEM) carbon support films.
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Vacuum Evaporators
Thermal evaporation under high vacuum is an established method of depositing thin layers of metals and carbon. Typical applications include the production of support films and specimen replicas for transmission electron microscopy (TEM) and many thin-film applications.
RF Plasma Etchers/Plasma
Reactors
RF plasma allows the low-temperature modification of a wide range of specimens and substrates. Plasma etching is generally confined to the semiconductor industry, typically for the removal of silicon layers using reactive gases, such as CF4 and for the removal of Photoresist using oxygen.