The TM3000 is Hitachi High Technologies latest Tabletop Microscope. New features include variable accelerating voltage, higher beam current, larger stage and chamber, and smaller footprint.
The XE-100 is our flagship AFM with reduced drift rate and the Step-and-Scan Automation that provides the ultimate AFM/SPM performance in Non-Contact nanoscale metrology.
The IR-OBIRCH Analysis System "μAMOS" is a semiconductor failure analyzer which uses IR-OBIRCH (Infrared Optical Beam Induced Resistance CHange) method for localization of leakage current path and the abnormal resistance part of contacts (via contact) in LSI devices.
The PHI 5000 VersaProbe is a multi-technique surface analysis instrument based on PHI's highly successful scanning x-ray microprobe technology.
The FB2200 allows for rapid and precise specimen preparation for both transmission and scanning electron microscopy of semiconductors and other advanced materials.
SIGMATECH, INC.
B136 L1 C. Arellano St.
Katarungan Vill., (Daang Hari), Poblacion
Muntinlupa City 1776, Philippines
Phone - (632)358-5889 (Service)
- (632)576-8913 (Sales)
- (632)576-1599 (Admin/Accounting)
Fax - (632) 807-8392
Hotlines - 0928 503-3281 (Smart)
- 0917 847-5730 (Globe)
Email - sales@sigmatech-inc.com
- service@sigmatech-inc.com
| product name |
image (click to enlarge) |
description |
|---|---|---|
| Page Top | ||
| Phemos-1000 | ![]() |
The PHEMOS-1000 is a standard model high-resolution emission microscope that includes an IR confocal laser scan microscope. |
| Phemos 200 | ![]() |
The Phemos-200 is an emission microscope with basic mesasurement performance. It is equipped with a 1024 x 1024 pixel high resolution, cooled CCD camera as standard. |
| THEMOS-1000 | ![]() |
The THEMOS-1000 thermal emission analysis tool is a system for analyzing semiconductor failures through the detection and localization of the thermal signal generated within semiconductor devices. |
| THEMOS-Mini | ![]() |
THEMOS mini is thermal emission microscope with a high-sensitivity InSb camera that detects internal heat emissions from a semiconductor device. By displaying the detected thermal image superimposed onto the pattern image, |
| Triphemos | ![]() |
In response to the increased speed of CPU’s and the requirements for reduced power consumption in mobile devices, advanced ICs have undergone a lowering of voltage, conversion to flip chips, multi-layering and further size reductions. |
| uAMOS-200 | ![]() |
The IR-OBIRCH Analysis System "μAMOS" is a semiconductor failure analyzer which uses IR-OBIRCH (Infrared Optical Beam Induced Resistance CHange) method for localization of leakage current path and the abnormal resistance part of contacts (via contact) in LSI devices. The S/N ratio can be greatly improved by using a lock-in unit to detect OBIRCH signal at specific frequency. Furthermore, by using the high current probe head, devices running at high current and high voltage can be analyzed. |